Analysis of SiC BJT RBSOA

Author

Gao, Yan ; Huang, Alex Q. ; Chen, Bin ; Agarwal, Anant K. ; Krishnaswami, Sumi ; Scozzie, Charles

Author_Institution

Semicond. Power Electron. Center, North Carolina State Univ., Raleigh, NC

fYear

2006

fDate

4-8 June 2006

Firstpage

1

Lastpage

4

Abstract

The reverse biased safe operating area (RBSOA) of 1200V SiC BJT has been systematically analyzed by numerical simulation and experiments for the first time and compared with those for Si BJT. A square RBSOA of SiC BJT is predicted and verified by experiments. Our experiment results show that the SiC BJT can safely turn off 1100V, 67A (2990A/cm²), corresponding to 3.7 MW/cm peak turn-off power density. This is an extremely high power density indicating that no early "second breakdown" occurs

Keywords

bipolar transistor switches; power semiconductor switches; semiconductor device breakdown; semiconductor device models; silicon compounds; wide band gap semiconductors; 1200 V; 67 A; SiC; bipolar junction transistors; numerical simulation; power switches; reverse biased safe operating area; Breakdown voltage; Current density; Current measurement; Doping; Electric breakdown; Laboratories; Power electronics; Pulse measurements; Silicon carbide; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and IC's, 2006. ISPSD 2006. IEEE International Symposium on

Conference_Location

Naples

Print_ISBN

0-7803-9714-2

Type

conf

DOI

10.1109/ISPSD.2006.1666126

Filename

1666126