• DocumentCode
    2368718
  • Title

    Harmful voltage overshoots due to turn-on behaviour of ESD protections during fast transients

  • Author

    Smedes, T. ; Guitard, N.

  • Author_Institution
    NXP Semicond., Nijmegen
  • fYear
    2007
  • fDate
    16-21 Sept. 2007
  • Abstract
    Due to the reaction time of the devices, the rise time of an ESD pulse has a strong effect on the efficiency of a protection network. (vf-)TLP clearly causes different failure modes depending on the rise time. This knowledge is needed to design protections that can handle fast ESD transients.
  • Keywords
    electrostatic discharge; transients; transmission lines; ESD protections; ESD transients; harmful voltage overshoots; reaction time; turn-on behaviour; vf-TLP systems; Current density; Electronic mail; Electrostatic discharge; Filters; Protection; Pulse circuits; Pulse measurements; Robustness; Time measurement; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    29th Electrical Overstress/Electrostatic Discharge Symposium, 2007. EOS/ESD
  • Conference_Location
    Anaheim, CA
  • Print_ISBN
    978-1-58537-136-5
  • Type

    conf

  • DOI
    10.1109/EOSESD.2007.4401774
  • Filename
    4401774
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2368718