DocumentCode :
2368742
Title :
A 15.5m Ω cm2-680V Superjunction MOSFET Reduced On-Resistance by Lateral Pitch Narrowing
Author :
Saito, W. ; Omura, I. ; Aida, S. ; Koduki, S. ; Izumisawa, M. ; Yoshioka, H. ; Okumura, H. ; Yamaguchi, M. ; Ogura, T.
Author_Institution :
Toshiba Corp., Kawasaki
fYear :
2006
fDate :
4-8 June 2006
Firstpage :
1
Lastpage :
4
Abstract :
Si-MOSFETs with the breakdown voltage of 680 V and the specific on-resistance of 15.5 mOmegacm2 were demonstrated by the superjunction (SJ) structure. The lateral pitch for the SJ structure was narrowed to 12 mum for the on-resistance reduction. The demonstrated on-resistance is the lowest one among previously reported 600 V-class SJ-MOSFETs. The fabricated MOSFET also realized low RonQgd of 1.8 OmeganC and high avalanche current of 175 A/cm2
Keywords :
power MOSFET; power semiconductor devices; semiconductor device breakdown; semiconductor junctions; 12 micron; 680 V; Si; breakdown voltage; lateral pitch narrowing; power MOSFET; super junction MOSFET; superjunction structure; Breakdown voltage; Commercialization; Doping; Electric resistance; Impurities; Inverters; MOSFET circuits; Power MOSFET; Power supplies; Switching circuits; Power MOSFET; high voltage device; low on-resistance; superjunction;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Semiconductor Devices and IC's, 2006. ISPSD 2006. IEEE International Symposium on
Conference_Location :
Naples
Print_ISBN :
0-7803-9714-2
Type :
conf
DOI :
10.1109/ISPSD.2006.1666129
Filename :
1666129
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2368742
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