• DocumentCode
    2368742
  • Title

    A 15.5m Ω cm2-680V Superjunction MOSFET Reduced On-Resistance by Lateral Pitch Narrowing

  • Author

    Saito, W. ; Omura, I. ; Aida, S. ; Koduki, S. ; Izumisawa, M. ; Yoshioka, H. ; Okumura, H. ; Yamaguchi, M. ; Ogura, T.

  • Author_Institution
    Toshiba Corp., Kawasaki
  • fYear
    2006
  • fDate
    4-8 June 2006
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Si-MOSFETs with the breakdown voltage of 680 V and the specific on-resistance of 15.5 mOmegacm2 were demonstrated by the superjunction (SJ) structure. The lateral pitch for the SJ structure was narrowed to 12 mum for the on-resistance reduction. The demonstrated on-resistance is the lowest one among previously reported 600 V-class SJ-MOSFETs. The fabricated MOSFET also realized low RonQgd of 1.8 OmeganC and high avalanche current of 175 A/cm2
  • Keywords
    power MOSFET; power semiconductor devices; semiconductor device breakdown; semiconductor junctions; 12 micron; 680 V; Si; breakdown voltage; lateral pitch narrowing; power MOSFET; super junction MOSFET; superjunction structure; Breakdown voltage; Commercialization; Doping; Electric resistance; Impurities; Inverters; MOSFET circuits; Power MOSFET; Power supplies; Switching circuits; Power MOSFET; high voltage device; low on-resistance; superjunction;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices and IC's, 2006. ISPSD 2006. IEEE International Symposium on
  • Conference_Location
    Naples
  • Print_ISBN
    0-7803-9714-2
  • Type

    conf

  • DOI
    10.1109/ISPSD.2006.1666129
  • Filename
    1666129
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2368742