DocumentCode
2368746
Title
Grid generation for three-dimensional process and device simulation
Author
Fleischmann, P. ; Sabelka, R. ; Stach, A. ; Strasser, R. ; Selberherr, S.
Author_Institution
Inst. for Microelectron., Tech. Univ. Wien, Austria
fYear
1996
fDate
2-4 Sept. 1996
Firstpage
161
Lastpage
166
Abstract
The growing importance of three-dimensional simulation has made mesh generation the key to accurate and fast solutions. Where in two dimensions many different and only moderately sophisticated methods are established and feasible, there is the need in three dimensions for far more efficient strategies. Not only the amount of data and the complexity of the simulated structures pose an increasing challenge, but also the visualization of the three-dimensional grid as an important feedback for the developer becomes more difficult. Meshing has been geared more and more towards automation. Especially, in Technology Computer-Aided Design (TCAD) where the input to the gridder can be the output from a topography simulator the degree of automation requires further discussion. The authors investigate the state of the art and give an overview of activities in that field.
Keywords
circuit CAD; digital simulation; mesh generation; semiconductor process modelling; IC technology; TCAD; mesh generation; technology computer-aided design; three-dimensional grid; three-dimensional process simulation; Computational modeling; Data visualization; Design automation; Mesh generation; Microelectronics; Semiconductor process modeling; Smoothing methods; Spline; Surface topography; World Wide Web;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices, 1996. SISPAD 96. 1996 International Conference on
Print_ISBN
0-7803-2745-4
Type
conf
DOI
10.1109/SISPAD.1996.865321
Filename
865321
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