• DocumentCode
    2368746
  • Title

    Grid generation for three-dimensional process and device simulation

  • Author

    Fleischmann, P. ; Sabelka, R. ; Stach, A. ; Strasser, R. ; Selberherr, S.

  • Author_Institution
    Inst. for Microelectron., Tech. Univ. Wien, Austria
  • fYear
    1996
  • fDate
    2-4 Sept. 1996
  • Firstpage
    161
  • Lastpage
    166
  • Abstract
    The growing importance of three-dimensional simulation has made mesh generation the key to accurate and fast solutions. Where in two dimensions many different and only moderately sophisticated methods are established and feasible, there is the need in three dimensions for far more efficient strategies. Not only the amount of data and the complexity of the simulated structures pose an increasing challenge, but also the visualization of the three-dimensional grid as an important feedback for the developer becomes more difficult. Meshing has been geared more and more towards automation. Especially, in Technology Computer-Aided Design (TCAD) where the input to the gridder can be the output from a topography simulator the degree of automation requires further discussion. The authors investigate the state of the art and give an overview of activities in that field.
  • Keywords
    circuit CAD; digital simulation; mesh generation; semiconductor process modelling; IC technology; TCAD; mesh generation; technology computer-aided design; three-dimensional grid; three-dimensional process simulation; Computational modeling; Data visualization; Design automation; Mesh generation; Microelectronics; Semiconductor process modeling; Smoothing methods; Spline; Surface topography; World Wide Web;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Simulation of Semiconductor Processes and Devices, 1996. SISPAD 96. 1996 International Conference on
  • Print_ISBN
    0-7803-2745-4
  • Type

    conf

  • DOI
    10.1109/SISPAD.1996.865321
  • Filename
    865321