DocumentCode
2368765
Title
A new approach to mesh generation for complex 3D semiconductor device structures
Author
Tanaka, Katsuhiko ; Notsu, A. ; Matsumoto, Hiroshi
Author_Institution
Microelectron. Res. Labs., NEC Corp., Sagamihara, Japan
fYear
1996
fDate
2-4 Sept. 1996
Firstpage
167
Lastpage
168
Abstract
A new approach to mesh generation for general 3D domain is proposed. A prototype mesh generator which utilizes octree for easy manipulation of 3D structures, is developed. It shows that "well-fitted" tetrahedral mesh can be constructed assuming that an appropriate triangular mesh upon the boundary is given. There is a good chance that adaptive meshing and moving boundary will be managed well in this mesh generation method.
Keywords
digital simulation; electronic engineering computing; mesh generation; numerical stability; semiconductor device models; adaptive meshing; boundary triangular mesh; complex 3D device structures; mesh generation; moving boundary; octree; semiconductor device structures; tetrahedral mesh; Control systems; Data structures; Impurities; Linear systems; Mesh generation; National electric code; Prototypes; Semiconductor devices; Size control;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices, 1996. SISPAD 96. 1996 International Conference on
Print_ISBN
0-7803-2745-4
Type
conf
DOI
10.1109/SISPAD.1996.865322
Filename
865322
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