DocumentCode
2368767
Title
A new versatile high speed pattern generator for nanolithography
Author
Wei, Shuhua ; Liu, Wei ; Li Ham
Author_Institution
Inst. of Electr. Eng., Chinese Acad. of Sci., Beijing
fYear
2008
fDate
24-27 March 2008
Firstpage
824
Lastpage
828
Abstract
A new versatile high speed pattern generator for nanolevel structure research and applications has been designed and developed. The digital signal processor (DSP) is employed in the pattern generator, so coordinates of exposure points inside. the primitive shapes can be calculated with a very high speed. The beam scanning of scanning electron microscope (SEM) is controlled by two sets of 16 bit digital-to-analog converters (DACs). Meanwhile the hardware can acquire SEM images, transfer data and control laser stage. Users can design various patterns and import common industrial layouts such as CIF/GDSII format files by the software package. The powerful display, drawing, and editing capabilities of the software package can accomplish different user necessities for pattern design. The experiments indicate the resolution can approach nanometer, and the field stitching accuracy better than 0.2 mum.
Keywords
digital signal processing chips; digital-analogue conversion; electron beam lithography; nanoelectronics; nanolithography; scanning electron microscopy; 16 bit digital-to-analog converters; SEM images; beam scanning technique; digital signal processor; electron beam lithography; field stitching accuracy; high speed pattern generator; nanofabrication; nanolevel structure research; nanolithography; scanning electron microscope; software package; Digital signal processing; Digital signal processors; Electron beams; Laser beams; Nanolithography; Nanostructures; Scanning electron microscopy; Shape; Signal generators; Software packages; Electron beam lithography; Nanofabrication; Nanolithography; Pattern design; Pattern generator;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanoelectronics Conference, 2008. INEC 2008. 2nd IEEE International
Conference_Location
Shanghai
Print_ISBN
978-1-4244-1572-4
Electronic_ISBN
978-1-4244-1573-1
Type
conf
DOI
10.1109/INEC.2008.4585610
Filename
4585610
Link To Document