DocumentCode :
2368792
Title :
Efficient 3D mesh adaptation in diffusion simulation
Author :
Chen, Tao ; Yergeau, Daniel W. ; Dutton, Robert W.
Author_Institution :
Integrated Circuits Lab., Stanford Univ., CA, USA
fYear :
1996
fDate :
2-4 Sept. 1996
Firstpage :
171
Lastpage :
172
Abstract :
Summary form only given. Diffusion simulation is an important part in today´s TCAD research. While many works have been done on 2D mesh adaptations in diffusion simulation, 3D mesh adaptation remains a challenging area due to the excessive amount of grid points most mesh generation algorithms produce. In this paper, we apply a generalized octree grid generation algorithm for mesh adaptation. It has the advantage of reducing the number of nodes necessary for accurate simulations. New nodes are added efficiently to reflect the changing position of the junctions and old nodes are removed when they no longer have simulation significance.
Keywords :
diffusion; digital simulation; mesh generation; semiconductor doping; semiconductor process modelling; 3D mesh adaptation; TCAD research; diffusion simulation; generalized octree grid generation algorithm; grid points; nodes; Boron; Circuit simulation; Computational modeling; Design automation; Error correction; Laboratories; Level control; MOSFET circuits; Mesh generation; Nonlinear equations;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 1996. SISPAD 96. 1996 International Conference on
Print_ISBN :
0-7803-2745-4
Type :
conf
DOI :
10.1109/SISPAD.1996.865324
Filename :
865324
Link To Document :
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