ZnO thin film grown on glass by metal-organic chemical vapor deposition

Author

Ma, X.M. ; Yang, X.T. ; Wang, C. ; Yang, J. ; Gao, X.H. ; Liu, J.E. ; Jing, H. ; Du, G.T. ; Liu, B.Y. ; Ma, Kwan-Liu

Author_Institution

Changchun Inst. of Opt. Fine Mech. & Phys., Chinese Acad. of Sci., Changchun

fYear

2008

fDate

24-27 March 2008

Firstpage

833

Lastpage

835

Abstract

ZnO thin film was deposited on the substrate of Corning glass by metal-organic chemical vapor deposition (MOCVD) [X. Wang et al., 2002; J. Wang et al., 2002; X. Wang et al., 2001] with a buffer layer of SiN_x grown by plasma enhanced chemical vapor deposition. The quality of ZnO film was studied by X-ray diffraction and photoluminescence measurement. We found strong diffraction (0 0 2) peak at 34.50deg, indicating that the ZnO film was strongly C-oriented. The full-width at half maximum of (0 0 2) peak was 0.179deg.

Keywords

II-VI semiconductors; MOCVD; X-ray diffraction; glass; photoluminescence; semiconductor growth; semiconductor thin films; wide band gap semiconductors; zinc compounds; Corning glass substrate; MOCVD; X-ray diffraction; ZnO; metal organic chemical vapor deposition; photoluminescence measurement; thin film; Buffer layers; Chemical vapor deposition; Glass; MOCVD; Plasma measurements; Silicon compounds; Sputtering; Substrates; X-ray diffraction; Zinc oxide; MOCVD; Thin film; XRD; ZnO;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanoelectronics Conference, 2008. INEC 2008. 2nd IEEE International

Conference_Location

Shanghai

Print_ISBN

978-1-4244-1572-4

Electronic_ISBN

978-1-4244-1573-1

Type

conf

DOI

10.1109/INEC.2008.4585612

Filename

4585612