Title :
Electrical and Physical Characterization of 150-200V FLYMOSFETs
Author :
Roig, J. ; Weber, Y. ; Reynès, J.M. ; Morancho, F. ; Stefanov, E.N. ; Dilhan, M. ; Sarrabayrouse, G.
Author_Institution :
LAAS/CNRS, Toulouse Cedex
Abstract :
A vertical n-channel 150V-200V FLYMOSFET is proposed in this work for the first time. Initially, spreading resistance profiling, scanning capacitance microscopy and process simulation are used to provide an accurate 1D and 2D device physical characterization. Concerning the electrical study, FLYMOSFET measurements show superior RonS-BVdss trade-off in comparison with the conventional power MOSFET and improved UIS ruggedness in front of the super junction MOSFET
Keywords :
power MOSFET; scanning probe microscopy; semiconductor device measurement; semiconductor device models; semiconductor junctions; 150 to 200 V; UIS ruggedness; device physical characterization; n-channel FLYMOSFET; process simulation; scanning capacitance microscopy; spreading resistance profiling; super junction MOSFET; vertical FLYMOSFET; Capacitance; Electric resistance; Immune system; MOSFET circuits; Microscopy; Neodymium; Power MOSFET; Shape; Testing; Voltage;
Conference_Titel :
Power Semiconductor Devices and IC's, 2006. ISPSD 2006. IEEE International Symposium on
Conference_Location :
Naples
Print_ISBN :
0-7803-9714-2
DOI :
10.1109/ISPSD.2006.1666131
