Title :
A 600V 8.7Ohmmm2Lateral Superjunction Transistor
Author :
Rüb, M. ; Bär, M. ; Deml, G. ; Kapels, H. ; Schmitt, M. ; Sedlmaier, S. ; Tolksdorf, C. ; Willmeroth, A.
Author_Institution :
Infineon Technol. Austria AG, Villach
Abstract :
In this work we present for the first time experimental results and corresponding device simulations for high voltage lateral superjunction MOSFETs. We investigated experimentally various degrees of compensation for the lateral compensation structure and improved additionally the chip performance by optimizing the layout. We also realized different layouts in order to improve the chip performance. We show that a blocking voltage (BV) of 640V is achieved. Devices blocking above 600V achieve an on-resistance of 7.1Omega, which corresponds to a Rds,on times A of 8.7Omegamm2
Keywords :
MOSFET; semiconductor device breakdown; semiconductor device models; semiconductor junctions; 600 V; 640 V; 7.1 ohm; MOSFET; blocking voltage; lateral superjunction transistor; Asia; Doping; Integrated circuit packaging; Integrated circuit technology; MOSFETs; Modems; Silicon; Switches; Thermal resistance; Voltage;
Conference_Titel :
Power Semiconductor Devices and IC's, 2006. ISPSD 2006. IEEE International Symposium on
Conference_Location :
Naples
Print_ISBN :
0-7803-9714-2
DOI :
10.1109/ISPSD.2006.1666132
