Title :
A consistent dynamic MOSFET model for low-voltage applications
Author :
Schrom, G. ; Stach, A. ; Selberherr, S.
Author_Institution :
Inst. for Microelectron., Tech. Univ. Wien, Austria
Abstract :
The development towards lower voltages and even ultra-low-power (ULP) technologies makes ever higher demands on compact device model accuracy. We present a new approach to dynamic MOSFET modeling, which is especially suited for the simulation of low-voltage mixed analog digital circuits. The model is based on terminal charges and conductive currents which are determined from transient current/voltage data which can be easily obtained through measurement or simulation of the devices.
Keywords :
MOS integrated circuits; MOSFET; circuit analysis computing; interpolation; mixed analogue-digital integrated circuits; semiconductor device models; conductive currents; device model accuracy; dynamic MOSFET model; low-voltage applications; mixed analog digital circuits; terminal charges; transient current/voltage data; ultra-low-power technologies; Capacitance; Circuit simulation; Computational modeling; Conductivity measurement; Current measurement; Digital circuits; Interpolation; MOSFET circuits; Software measurement; Voltage;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 1996. SISPAD 96. 1996 International Conference on
Print_ISBN :
0-7803-2745-4
DOI :
10.1109/SISPAD.1996.865327
