Implant-Free SiGe Quantum Well pFET: A novel, highly scalable and low thermal budget device, featuring raised source/drain and high-mobility channel

Author

Hellings, Geert ; Witters, Liesbeth ; Krom, Raymond ; Mitard, Jerome ; Hikavyy, Andriy ; Loo, Roger ; Schulze, A. ; Eneman, Geert ; Kerner, Christoph ; Franco, Jacopo ; Chiarella, Thomas ; Takeoka, Shinji ; Joshua Tseng ; Wei-E Wang ; Vandervorst, W. ; Ab

Author_Institution

Dept. Electr. Eng., Univ. of Leuven, Leuven, Belgium

fYear

2010

fDate

6-8 Dec. 2010

Abstract

A novel bulk-Si based pMOSFET structure is presented featuring a high-mobility SiGe_0.45 channel and raised SiGe_0.25 source/drains. This device offers enhanced scalability with respect to standard pMOS devices, leading to 50% improved drive current. 30nm gate length devices show a high drive current of ~580 μA/μm for I_OFF=100nA/μm, DIBL=126mV/V, SS=80mV/dec, showing superior electro- statics without halo implants. Finally, the compatibility with additional strain-boosters is demonstrated.

Keywords

Ge-Si alloys; MOSFET; carrier mobility; electrostatics; elemental semiconductors; semiconductor quantum wells; silicon; SiGe_0.45; bulk-Si based pMOSFET structure; drive current; electrostatics; gate length; high-mobility channel; implant-free SiGe quantum well pFET; pMOS device; raised SiGe source-drain; size 30 nm; strain-booster;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2010 IEEE International

Conference_Location

San Francisco, CA

ISSN

0163-1918

Print_ISBN

978-1-4424-7418-5

Electronic_ISBN

0163-1918

Type

conf

DOI

10.1109/IEDM.2010.5703335

Filename

5703335