DocumentCode :
2368876
Title :
Implant-Free SiGe Quantum Well pFET: A novel, highly scalable and low thermal budget device, featuring raised source/drain and high-mobility channel
Author :
Hellings, Geert ; Witters, Liesbeth ; Krom, Raymond ; Mitard, Jerome ; Hikavyy, Andriy ; Loo, Roger ; Schulze, A. ; Eneman, Geert ; Kerner, Christoph ; Franco, Jacopo ; Chiarella, Thomas ; Takeoka, Shinji ; Joshua Tseng ; Wei-E Wang ; Vandervorst, W. ; Ab
Author_Institution :
Dept. Electr. Eng., Univ. of Leuven, Leuven, Belgium
fYear :
2010
fDate :
6-8 Dec. 2010
Abstract :
A novel bulk-Si based pMOSFET structure is presented featuring a high-mobility SiGe0.45 channel and raised SiGe0.25 source/drains. This device offers enhanced scalability with respect to standard pMOS devices, leading to 50% improved drive current. 30nm gate length devices show a high drive current of ~580 μA/μm for IOFF=100nA/μm, DIBL=126mV/V, SS=80mV/dec, showing superior electro- statics without halo implants. Finally, the compatibility with additional strain-boosters is demonstrated.
Keywords :
Ge-Si alloys; MOSFET; carrier mobility; electrostatics; elemental semiconductors; semiconductor quantum wells; silicon; SiGe0.45; bulk-Si based pMOSFET structure; drive current; electrostatics; gate length; high-mobility channel; implant-free SiGe quantum well pFET; pMOS device; raised SiGe source-drain; size 30 nm; strain-booster;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting (IEDM), 2010 IEEE International
Conference_Location :
San Francisco, CA
ISSN :
0163-1918
Print_ISBN :
978-1-4424-7418-5
Electronic_ISBN :
0163-1918
Type :
conf
DOI :
10.1109/IEDM.2010.5703335
Filename :
5703335
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2368876
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