Title :
High Temperature Operation AlGaN/GaN HFET with a low on-state resistance, a high breakdown voltage and a fast switching capacity
Author :
Nomura, Takehiko ; Kambayashi, Hiroshi ; Masuda, Mitsuru ; Ishii, Sonomi ; Ikeda, Nariaki ; Lee, Jiang ; Yoshida, Seikoh
Author_Institution :
Yokohama R&D Labs., Furukawa Electr. Co., Ltd., Yokohama
Abstract :
Improved characteristics of an AlGaN/GaN HFET are reported. We introduced new fabrication processes using Ti/AlSi/Mo ohmic electrode and a low refractive index SiNx to decrease the contact resistance and gate leakage current. The AlGaN/GaN HFET showed low a specific resistance of 6.3 mOmegacm2 and a high breakdown voltage of 750 V. We investigated switching characteristics of an AlGaN/GaN HFET. The small turn-on delay of 7.2 nsec, which was 1/10 of Si MOSFET, was measured. The switching operation of the HFET showed no significant degradation up to 225degC
Keywords :
III-V semiconductors; aluminium compounds; field effect transistors; gallium compounds; molybdenum; ohmic contacts; semiconductor device breakdown; silicon compounds; titanium; wide band gap semiconductors; 7.2 ns; 750 V; AlGaN-GaN; SiN; Ti-AlSi-Mo; breakdown voltage; contact resistance; fast switching capacity; gate leakage current; high temperature operation HFET; ohmic electrode; on-state resistance; refractive index; Aluminum gallium nitride; Contact resistance; Electrodes; Fabrication; Gallium nitride; HEMTs; MODFETs; Refractive index; Silicon compounds; Temperature;
Conference_Titel :
Power Semiconductor Devices and IC's, 2006. ISPSD 2006. IEEE International Symposium on
Conference_Location :
Naples
Print_ISBN :
0-7803-9714-2
DOI :
10.1109/ISPSD.2006.1666134
