Title :
An amorphous-silicon thin-film transistor model including variable resistance effect
Author :
Tanizawa, M. ; Kikuta, S. ; Nakagawa, N. ; Ishikawa, K. ; Kotani, N. ; Miyoshi, H.
Author_Institution :
ULSI Lab., Mitsubishi Electr. Corp., Hyogo, Japan
Abstract :
A new analytical drain current model including variable series resistance for the a-Si:TFT is presented. Results calculated by the model show very good agreement with experimental results for all operating bias conditions and indicate the scalability over different device geometries.
Keywords :
amorphous semiconductors; electric resistance; elemental semiconductors; semiconductor device models; silicon; thin film transistors; Si; TFT; device geometries; drain current model; model; operating bias conditions; scalability; series resistance; thin-film transistor; variable resistance effect; Analytical models; Circuit simulation; Conductivity; Electric resistance; Equations; Liquid crystal displays; Semiconductor diodes; Temperature distribution; Thin film transistors; Voltage;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 1996. SISPAD 96. 1996 International Conference on
Print_ISBN :
0-7803-2745-4
DOI :
10.1109/SISPAD.1996.865329
