Title :
Stepped-Drift LDMOSFET: A Novel Drift Region Engineered Device for Advanced Smart Power Technologies
Author :
Zhu, R. ; Khemka, V. ; Bose, A. ; Roggenbauer, T.
Author_Institution :
Freescale Semicond., Inc., Tempe, AZ
Abstract :
A novel drift region engineered stepped-drift LDMOSFET device in Freescale´s 0.25mum smart power technology is reported for the first time. The specific on-resistance of the device is 0.33 mOmegamiddotcm2 at breakdown voltage of 59 V, the best reported data to date. SOA of the device has been improved up to 87% compared to its conventional counterpart
Keywords :
power MOSFET; 0.25 micron; 59 V; drift region engineered device; smart power technologies; stepped-drift LDMOSFET; Cost function; Degradation; Geometry; Immune system; Isolation technology; Power engineering and energy; Power generation; Process control; Proximity effect; Semiconductor optical amplifiers;
Conference_Titel :
Power Semiconductor Devices and IC's, 2006. ISPSD 2006. IEEE International Symposium on
Conference_Location :
Naples
Print_ISBN :
0-7803-9714-2
DOI :
10.1109/ISPSD.2006.1666139
