Raman spectroscopy in aluminum-doped zinc oxide nanorods

Author

Eskandar, M. ; Ahmadi, Vahid ; Ahmadi, Sh ; Ghorab, F.

Author_Institution

Dept. of Nanomater. Eng., Tarbiat Modares Univ., Tehran

fYear

2008

fDate

24-27 March 2008

Firstpage

875

Lastpage

877

Abstract

Aluminum-doped zinc oxide nanorods are deposited on glass by solution chemical for the first time. The as-grown samples are characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), UV-Vis spectroscopy and Raman spectroscopy. We observe that Raman spectroscopy of aluminum-doped zinc oxide nanorods is different from un-doped zinc oxide nanorods. The intensity of Raman peak at 437 cm^-1 is decreased for aluminum-doped zinc oxide nanorods sample while peak at 750 cm^-1 appears. X-ray diffraction (XRD) shows aluminum-doped zinc oxide nanorods grown in the (002) orientation. UV-Vis spectroscopy shows no difference in the aluminum-doped zinc oxide nanorods than undoped zinc oxide nanorods.

Keywords

II-VI semiconductors; Raman spectroscopy; X-ray diffraction; aluminium; liquid phase deposition; nanostructured materials; scanning electron microscopy; zinc compounds; Raman peak; Raman spectroscopy; SEM; UV-Vis spectroscopy; X-ray diffraction; XRD; ZnO:Al; nanorods; scanning electron microscopy; Nanoelectronics; Raman scattering; Spectroscopy; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanoelectronics Conference, 2008. INEC 2008. 2nd IEEE International

Conference_Location

Shanghai

Print_ISBN

978-1-4244-1572-4

Electronic_ISBN

978-1-4244-1573-1

Type

conf

DOI

10.1109/INEC.2008.4585622

Filename

4585622