Title :
Physical origin of pFET threshold voltage modulation by Ge channel ion implantation (GC-I/I)
Author :
Tsuchiya, Yoshinori ; Berliner, Nathaniel ; Iijima, Ryosuke ; Monsieur, Frederic ; Tai, Leo ; Loubet, Nicolas ; Edge, Lisa F. ; Takayanagi, Mariko ; Paruchuri, Vamsi
Author_Institution :
Toshiba America Electron. Components, Inc., Albany, NY, USA
Abstract :
We show a new Ge channel ion implantation scheme for realization of low-VTH pFET, which enables ~500mV VTH lowering with no Tinv, GIDL and NBTI degradations. We also reveal the physical origin of the large VTH modulation. Based on experimental findings, we propose simplified photo-resist masked dual low-VTH CMOS flow and demonstrate low-VTH pFET/nFET operations.
Keywords :
CMOS integrated circuits; elemental semiconductors; field effect transistors; germanium; ion implantation; photoresists; GIDL degradations; Ge; NBTI degradations; channel ion implantation scheme; low-VTH pFET; nFET; pFET threshold voltage modulation; photoresist masked dual low-VTH CMOS flow;
Conference_Titel :
Electron Devices Meeting (IEDM), 2010 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4424-7418-5
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2010.5703341
