Title :
High Voltage CMOS Line-up for Display Driver Applications based on 0.13 μm CMOS with Aluminum metallization Scheme
Author :
Oohori, T. ; Saito, H. ; Kamizono, H. ; Miyakawa, H. ; Kubota, Takahide
Author_Institution :
Syst. LSI Div. II, Toshiba Corp. Semicond. Co., Yokohama
Abstract :
The present paper describes the development of high voltage CMOS process line-up (5/11/20/30V) for display driver applications, based on 0.13mum CMOS process with aluminum metallization. The advantages are smaller size of SRAM bit cell and lower process cost. High voltage CMOS devices, 1.5V(LV) logic CMOS, 5.5V(MV)CMOS, poly-Si resistor (HR/MR), MOS-capacitor, SRAM and OTP are available. 10.8mum device pitch of 30V CMOS and good electric characteristics were successfully achieved. Thanks to the low cost and wide voltage options, various kind of display driver ICs can now be realized in smaller die size and lower cost
Keywords :
CMOS integrated circuits; driver circuits; integrated circuit design; integrated circuit metallisation; 0.13 micron; 1.5 V; 10.8 micron; 11 V; 20 V; 30 V; 5 V; CMOS line-up; CMOS process; MOS-capacitor; SRAM bit cell; aluminum metallization; display driver; logic CMOS; Aluminum; CMOS logic circuits; CMOS process; Costs; Displays; Logic devices; Metallization; Random access memory; Resistors; Voltage;
Conference_Titel :
Power Semiconductor Devices and IC's, 2006. ISPSD 2006. IEEE International Symposium on
Conference_Location :
Naples
Print_ISBN :
0-7803-9714-2
DOI :
10.1109/ISPSD.2006.1666144
