High Voltage CMOS Line-up for Display Driver Applications based on 0.13 μm CMOS with Aluminum metallization Scheme

Author

Oohori, T. ; Saito, H. ; Kamizono, H. ; Miyakawa, H. ; Kubota, Takahide

Author_Institution

Syst. LSI Div. II, Toshiba Corp. Semicond. Co., Yokohama

fYear

2006

fDate

4-8 June 2006

Firstpage

1

Lastpage

4

Abstract

The present paper describes the development of high voltage CMOS process line-up (5/11/20/30V) for display driver applications, based on 0.13mum CMOS process with aluminum metallization. The advantages are smaller size of SRAM bit cell and lower process cost. High voltage CMOS devices, 1.5V(LV) logic CMOS, 5.5V(MV)CMOS, poly-Si resistor (HR/MR), MOS-capacitor, SRAM and OTP are available. 10.8mum device pitch of 30V CMOS and good electric characteristics were successfully achieved. Thanks to the low cost and wide voltage options, various kind of display driver ICs can now be realized in smaller die size and lower cost

Keywords

CMOS integrated circuits; driver circuits; integrated circuit design; integrated circuit metallisation; 0.13 micron; 1.5 V; 10.8 micron; 11 V; 20 V; 30 V; 5 V; CMOS line-up; CMOS process; MOS-capacitor; SRAM bit cell; aluminum metallization; display driver; logic CMOS; Aluminum; CMOS logic circuits; CMOS process; Costs; Displays; Logic devices; Metallization; Random access memory; Resistors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and IC's, 2006. ISPSD 2006. IEEE International Symposium on

Conference_Location

Naples

Print_ISBN

0-7803-9714-2

Type

conf

DOI

10.1109/ISPSD.2006.1666144

Filename

1666144