Self-Heating Driven VthShifts in Integrated VDMOS Transistors

Author

Moens, P. ; Cano, J.F. ; De Keukeleire, C. ; Desoete, B. ; Aresu, S. ; de Ceuninck, W. ; De Vleeschouwer, H. ; Tack, M.

Author_Institution

AMI Semicond. Belgium, Oudenaarde

fYear

2006

fDate

4-8 June 2006

Firstpage

1

Lastpage

4

Abstract

Large threshold voltage shifts are observed in n-type integrated VDMOS transistors upon hot carrier stress. The effect is enhanced by the total internal temperature (ambient temperature + temperature increase due to power dissipation) of the device as well as by the gate oxide electric field. A model is presented and is used to extract the safe operating area (SOA) of the transistors. This is especially important as smart power technologies are often used in high temperature environments (up to 150-175degC), e.g. in automotive

Keywords

hot carriers; power integrated circuits; power transistors; semiconductor device models; 150 to 175 C; gate oxide electric field; hot carrier stress; integrated VDMOS transistors; safe operating area; smart power technologies; threshold voltage shifts; total internal temperature; Ambient intelligence; Degradation; Driver circuits; Hot carriers; Power dissipation; Stress; Switches; Temperature distribution; Temperature sensors; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and IC's, 2006. ISPSD 2006. IEEE International Symposium on

Conference_Location

Naples

Print_ISBN

0-7803-9714-2

Type

conf

DOI

10.1109/ISPSD.2006.1666147

Filename

1666147