Title :
1200V Interconnection Technique with Isolated Self-Shielding Structure
Author :
Kim, Sung-Lyong ; Jeon, Chang-Ki ; Kim, Min-Suk ; Kim, Jong-Jib
Author_Institution :
Process Dev. Group, Fairchild Semicond., Bucheon
Abstract :
1200V interconnection technique with the isolated self-shielding concept was verified by simulation and realized without big process changes from the 600V HVIC process conditions. P-substrate resistivity, p-isolation dose, and interlayer thickness, which relieve the electric field under HV interconnection metal line, are found to be the main factors determining breakdown voltage. Experimental results have shown that over 1200V of breakdown voltage without isolation leakage current can be obtained when the p-substrate resistivity of 200ohm.cm and the p-isolation dose of 8.0e12cm-2 are used
Keywords :
integrated circuit design; integrated circuit interconnections; leakage currents; power integrated circuits; 1200 V; 600 V; breakdown voltage; electric field; high voltage integrated circuit; high voltage interconnection metal line; interconnection technique; interlayer thickness; isolated self-shielding structure; leakage current; p-isolation dose; p-substrate resistivity; Conductivity; Degradation; ISO standards; Isolation technology; Leakage current; Logic; Low voltage; Protection; Robustness; Voltage control;
Conference_Titel :
Power Semiconductor Devices and IC's, 2006. ISPSD 2006. IEEE International Symposium on
Conference_Location :
Naples
Print_ISBN :
0-7803-9714-2
DOI :
10.1109/ISPSD.2006.1666148
