DocumentCode :
2369115
Title :
Ultimately scaled 20nm unified-RAM
Author :
Moon, Dong-Il ; Choi, Sung-Jin ; Kim, Chung-Jin ; Kim, Jee-Yeon ; Lee, Jin-Seong ; Oh, Jae-Sub ; Lee, Gi-Sung ; Park, Yun-Chang ; Hong, Dae-Won ; Lee, Dong-Wook ; Kim, Young-Su ; Kim, Jeoung-Woo ; Han, Jin-Woo ; Choi, Yang-Kyu
Author_Institution :
Dept. of EE, KAIST, Daejeon, South Korea
fYear :
2010
fDate :
6-8 Dec. 2010
Abstract :
A 20 nm all-around-gate (AAG) FET is demonstrated for unified-RAM by the use of an 8 nm Si-nanowire on a bulk-substrate. High performances of NVM and 1T-DRAM are presented.
Keywords :
DRAM chips; field effect transistors; nanowires; DRAM; Si-nanowire; all-around-gate FET; unified-RAM;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting (IEDM), 2010 IEEE International
Conference_Location :
San Francisco, CA
ISSN :
0163-1918
Print_ISBN :
978-1-4424-7418-5
Electronic_ISBN :
0163-1918
Type :
conf
DOI :
10.1109/IEDM.2010.5703346
Filename :
5703346
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2369115
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