Low temperature deposited nano-structured vanadium oxide thin films for uncooled infrared detectors

Author

Li, Guike ; Wang, Xiaodong ; Liang, Jiran ; Ji, An ; Hu, Ming ; Yang, Fuhua ; Liu, Jian ; Wu, Nanjian ; Chen, HongDa

Author_Institution

Nat. Lab. for Superlattices & Microstructures, Chinese Acad. of Sci., Beijing

fYear

2008

fDate

24-27 March 2008

Firstpage

921

Lastpage

923

Abstract

A novel process of room temperature ion beam sputtering deposition of vanadium oxide films and low temperature post annealing for uncooled infrared detectors was proposed in this work. VO_x thin films with relatively low square resistance (70 K Omega / square) and large temperature coefficient of resistance (more than 3%/K) at room temperature were fabricated using this low temperature process which was very compatible with the process of uncooled infrared detectors based on micromachined technology. Furthermore, chemical composition and film surface have been characterized using X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM) respectively. The results showed that the main composition of the processed thin films was V₂O₅ and the thin films were in the process of crystallization.

Keywords

X-ray photoelectron spectra; crystallisation; infrared detectors; ion beam applications; micromechanical devices; scanning electron microscopy; sputtering; thin film circuits; thin film devices; vanadium compounds; SEM; V₂O₅; X-ray photoelectron spectroscopy; chemical composition; crystallization process; large temperature coefficient; low square resistance; low temperature deposited nanostructured vanadium oxide thin films; low temperature process; micromachined technology; room temperature; room temperature ion beam sputtering deposition; scanning electron microscopy; temperature 293 K to 298 K; uncooled infrared detectors; Annealing; Chemical technology; Infrared detectors; Ion beams; Scanning electron microscopy; Spectroscopy; Sputtering; Surface resistance; Temperature; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanoelectronics Conference, 2008. INEC 2008. 2nd IEEE International

Conference_Location

Shanghai

Print_ISBN

978-1-4244-1572-4

Electronic_ISBN

978-1-4244-1573-1

Type

conf

DOI

10.1109/INEC.2008.4585634

Filename

4585634