Low dielectric constant and hydrophobic nanoporous silica films

Author

Jun, Shen ; Yumei, Zhu ; Xuejing, Lin ; Guangming, Wu ; Bin, Zhou ; Xingyuan, Ni ; Lanfang, Yao ; Guoqing, Wang ; Peiqing, Wang ; Qingfeng, Wang ; Xixian, Niu

Author_Institution

Pohl Inst. of Solid State Phys., Tongji Univ., Shanghai

fYear

2008

fDate

24-27 March 2008

Firstpage

924

Lastpage

927

Abstract

A novel route to prepare low-dielectric constant mesoporous SiO₂ films is reported in this paper. Silicate sols are prepared with the precursor TEOS and template CTAB catalyzed by hydrochloric acid. The films are prepared by dip-coating process. FTIIR, XRD and AFM are used to characterize the films. The dielectric constants are measured by impedance analysis apparatus. The films with dielectric constants smaller than 2.2 can be acquired by adjusting the concentration of CTAB and aging time.

Keywords

ageing; catalysts; dielectric materials; dip coating; materials preparation; mesoporous materials; nanoporous materials; permittivity; silicon compounds; sols; AFM; CTAB; FTIIR; SiO₂; XRD; aging; dielectric constant; dip coating; hydrophobic nanoporous silica films; impedance analysis; silicate sols; Dielectric constant; Nanoelectronics; Nanoporous materials; Silicon compounds; films; hydrophobic; low dielectric constant;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanoelectronics Conference, 2008. INEC 2008. 2nd IEEE International

Conference_Location

Shanghai

Print_ISBN

978-1-4244-1572-4

Electronic_ISBN

978-1-4244-1573-1

Type

conf

DOI

10.1109/INEC.2008.4585635

Filename

4585635