Title :
Memory technology trend and future challenges
Author_Institution :
R&D Div., Hynix Semicond. Inc., Icheon, South Korea
Abstract :
Challenges in scaling semiconductor memory technologies are reviewed with special focus on DRAM and NAND Flash where technology scaling-down is at risk below 20nm. Some recent progress on overcoming scaling challenges of current and new memory technologies are introduced as well as some of the possible technology replacements are reviewed.
Keywords :
DRAM chips; NAND circuits; DRAM; NAND flash; memory technology trend; semiconductor memory technologies; size 20 nm;
Conference_Titel :
Electron Devices Meeting (IEDM), 2010 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4424-7418-5
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2010.5703348
