Title :
Switching distributions and write reliability of perpendicular spin torque MRAM
Author :
Worledge, D.C. ; Hu, G. ; Trouilloud, P.L. ; Abraham, D.W. ; Brown, S. ; Gaidis, M.C. ; Nowak, J. ; O´Sullivan, E.J. ; Robertazzi, R.P. ; Sun, J.Z. ; Gallagher, W.J.
Author_Institution :
IBM TJ Watson Res. Center, IBM-MagIC MRAM Alliance, Yorktown Heights, NY, USA
Abstract :
We report data from 4-kbit spin torque MRAM arrays using tunnel junctions (TJs) with magnetization perpendicular to the wafer plane. We show for the first time the switching distribution of perpendicular spin torque junctions. The percentage switching voltage width, σ(Vc)/<;Vc>; = 4.4%, is sufficient to yield a 64 Mb chip. Furthermore we report switching probability curves down to error probabilities of 5×10-9 per pulse which do not show the anomalous switching seen in previous studies of in-plane magnetized bits.
Keywords :
MRAM devices; error statistics; tunnelling; error probabilities; perpendicular spin torque MRAM; spin torque MRAM arrays; switching distributions; switching probability curves; tunnel junctions; word length 4000 bit; write reliability;
Conference_Titel :
Electron Devices Meeting (IEDM), 2010 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4424-7418-5
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2010.5703349
