• DocumentCode
    2369192
  • Title

    Switching distributions and write reliability of perpendicular spin torque MRAM

  • Author

    Worledge, D.C. ; Hu, G. ; Trouilloud, P.L. ; Abraham, D.W. ; Brown, S. ; Gaidis, M.C. ; Nowak, J. ; O´Sullivan, E.J. ; Robertazzi, R.P. ; Sun, J.Z. ; Gallagher, W.J.

  • Author_Institution
    IBM TJ Watson Res. Center, IBM-MagIC MRAM Alliance, Yorktown Heights, NY, USA
  • fYear
    2010
  • fDate
    6-8 Dec. 2010
  • Abstract
    We report data from 4-kbit spin torque MRAM arrays using tunnel junctions (TJs) with magnetization perpendicular to the wafer plane. We show for the first time the switching distribution of perpendicular spin torque junctions. The percentage switching voltage width, σ(Vc)/<;Vc>; = 4.4%, is sufficient to yield a 64 Mb chip. Furthermore we report switching probability curves down to error probabilities of 5×10-9 per pulse which do not show the anomalous switching seen in previous studies of in-plane magnetized bits.
  • Keywords
    MRAM devices; error statistics; tunnelling; error probabilities; perpendicular spin torque MRAM; spin torque MRAM arrays; switching distributions; switching probability curves; tunnel junctions; word length 4000 bit; write reliability;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2010 IEEE International
  • Conference_Location
    San Francisco, CA
  • ISSN
    0163-1918
  • Print_ISBN
    978-1-4424-7418-5
  • Electronic_ISBN
    0163-1918
  • Type

    conf

  • DOI
    10.1109/IEDM.2010.5703349
  • Filename
    5703349
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2369192