DocumentCode :
2369229
Title :
Fabrication of CNT interconnect structures and active devices using laser beam manipulation and deposition
Author :
Nai, M.H. ; Wang, S.Z. ; Moo, A.M. ; Vinciguerra, V. ; Kasim, J. ; Shen, Z.X.
Author_Institution :
STMicroelectronics Asia Pacific Pte Ltd., Singapore
fYear :
2008
fDate :
24-27 March 2008
Firstpage :
937
Lastpage :
940
Abstract :
A maskless and non-invasive technique based on optical trapping is used for the direct writing of CNT patterns on Si wafers. Interconnections and active transistor devices are fabricated at room temperatures using this technique.
Keywords :
carbon nanotubes; elemental semiconductors; integrated circuit interconnections; laser deposition; radiation pressure; silicon; CNT interconnect structures fabrication; Si; carbon nanotube interconnections; direct writing; laser beam deposition; laser beam manipulation; maskless technique; noninvasive technique; optical trapping; silicon wafers; Laser beams; Nanoelectronics; Optical device fabrication;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanoelectronics Conference, 2008. INEC 2008. 2nd IEEE International
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-1572-4
Electronic_ISBN :
978-1-4244-1573-1
Type :
conf
DOI :
10.1109/INEC.2008.4585638
Filename :
4585638
Link To Document :
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