Title :
AlGaN/GaN transistors for power electronics
Author :
Mishra, Umesh K.
Author_Institution :
ECE Dept., Univ. of California, Santa Barbara, CA, USA
Abstract :
The focus of GaN based devices has expanded beyond LEDs and lasers to the large market of power electronics where the materials properties of high electron mobility, high breakdown field and good thermal conductivity make it attractive in ultra-high efficiency applications ranging from power supplies, PV inverters to motor drives.
Keywords :
III-V semiconductors; aluminium compounds; electric breakdown; electron mobility; gallium compounds; high electron mobility transistors; power electronics; power transistors; thermal conductivity; wide band gap semiconductors; AlGaN-GaN; HEMT; LED; breakdown field; electron mobility; lasers; motor drives; power electronics; power supply; power transistors; thermal conductivity; AlGaN/GaN; CAVET; HEMT; power electronics;
Conference_Titel :
Electron Devices Meeting (IEDM), 2010 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4424-7418-5
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2010.5703353
