DocumentCode :
2369295
Title :
Silicon carbide based power devices
Author :
Östling, Mikael
Author_Institution :
Sch. of Inf. & Commun. Technol., KTH R. Inst. of Technol., Kista, Sweden
fYear :
2010
fDate :
6-8 Dec. 2010
Abstract :
Silicon carbide is considered as a strong power semiconductor material candidate to address the emerging market of hybrid electrical vehicle, photovoltaic inverter applications as well as power supplies. This paper presents the current technology status on the most promising device types that are or soon will be available on the market.
Keywords :
power semiconductor devices; semiconductor materials; silicon compounds; current technology status; hybrid electrical vehicle; photovoltaic inverter applications; power semiconductor material; power supply; silicon carbide based power devices;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting (IEDM), 2010 IEEE International
Conference_Location :
San Francisco, CA
ISSN :
0163-1918
Print_ISBN :
978-1-4424-7418-5
Electronic_ISBN :
0163-1918
Type :
conf
DOI :
10.1109/IEDM.2010.5703354
Filename :
5703354
Link To Document :
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