DocumentCode :
2369311
Title :
Ultra high voltage semiconductor power devices for grid applications
Author :
Rahimo, M.T.
Author_Institution :
Semicond., ABB Switzerland Ltd., Lenzburg, Switzerland
fYear :
2010
fDate :
6-8 Dec. 2010
Abstract :
Silicon based high voltage semiconductor devices continue to play a major role in megawatt power electronics conversion especially in the fields of traction drives, industrial applications and grid systems. The main development trend of power devices has always been focused on increasing the power ratings while improving the over all device performance in terms of reduced losses, increased robustness, better controllability and reliable behavior under normal and fault conditions. This paper will focus on ultra high voltage devices for grid applications while providing an overview of the recent advancements from the device design and performance viewpoint for enabling the next generation of grid systems.
Keywords :
power electronics; power grids; silicon; grid application; megawatt power electronics conversion; silicon; traction drives; ultrahigh voltage semiconductor power device;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting (IEDM), 2010 IEEE International
Conference_Location :
San Francisco, CA
ISSN :
0163-1918
Print_ISBN :
978-1-4424-7418-5
Electronic_ISBN :
0163-1918
Type :
conf
DOI :
10.1109/IEDM.2010.5703355
Filename :
5703355
Link To Document :
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