Title :
Ti/CVD-WSix/Blanket-W structure for fine contact filling application
Author :
Ishihara, Koichi ; Yamadai, Tsutomu ; Onishi, Shigeo ; Matsuda, Kenzo ; Sakiyama, Keizo
Author_Institution :
VLSI Res., Sharp Corp., Nara, Japan
Abstract :
The blanket W process for the fine contact size and high aspect ratio has been developed by using the CVD-WSix films as a diffusion barrier. It was found that the CVD-WSix film has good step coverage and effective barrier properties. Low contact resistance of 58 Ω was obtained for the n+ diffusion layer when a contact diameter is 0.6 μm and the aspect ratio is 3. The Ti/CVD-WSi x/blanket-W structure also has much lower junction leakage compared to the conventional Ti/TiN/blanket-W structure
Keywords :
VLSI; chemical vapour deposition; metallisation; ohmic contacts; semiconductor-metal boundaries; titanium; tungsten; tungsten compounds; 0.6 micron; 58 ohm; CVD; Si-Ti-WSix-W; barrier properties; blanket W process; conformal step coverage; contact diameter; contact resistance; diffusion barrier; fine contact filling; fine contact size; high aspect ratio; junction leakage; ohmic contacts; step coverage; Adhesives; Annealing; Artificial intelligence; Contact resistance; Electrical resistance measurement; Filling; Laboratories; Semiconductor films; Sputtering; Tin;
Conference_Titel :
VLSI Multilevel Interconnection Conference, 1991, Proceedings., Eighth International IEEE
Conference_Location :
Santa Clara, CA
Print_ISBN :
0-87942-673-X
DOI :
10.1109/VMIC.1991.152984
