DocumentCode
2369360
Title
A leading-edge 0.9µm pixel CMOS image sensor technology with backside illumination: Future challenges for pixel scaling
Author
Wuu, S.G. ; Wang, C.C. ; Hseih, B.C. ; Tu, Y.L. ; Tseng, C.H. ; Hsu, T.H. ; Hsiao, R.S. ; Takahashi, S. ; Lin, R.J. ; Tsai, C.S. ; Chao, Y.P. ; Chou, K.Y. ; Chou, P.S. ; Tu, H.Y. ; Hsueh, F.L. ; Tran, L.
Author_Institution
Taiwan Semicond. Manuf. Co., Hsinchu, Taiwan
fYear
2010
fDate
6-8 Dec. 2010
Abstract
This paper presents process breakthroughs that enable a BSI 0.9μm pixel formation and its performance. The technology was developed using 300mm bulk silicon starting wafers with the state-of-the-art tool set for BSI sensor processing. This is the first demonstration of 0.9μm BSI pixel with acceptable optical performance. Further improvements are in the area of crosstalk suppression and color performance enhancement for continuous pixel scaling from 0.9μm.
Keywords
CMOS image sensors; BSI sensor processing; CMOS image sensor; backside illumination; bulk silicon starting wafers; pixel formation; pixel scaling; size 9 mum;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting (IEDM), 2010 IEEE International
Conference_Location
San Francisco, CA
ISSN
0163-1918
Print_ISBN
978-1-4424-7418-5
Electronic_ISBN
0163-1918
Type
conf
DOI
10.1109/IEDM.2010.5703358
Filename
5703358
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