DocumentCode :
2369360
Title :
A leading-edge 0.9µm pixel CMOS image sensor technology with backside illumination: Future challenges for pixel scaling
Author :
Wuu, S.G. ; Wang, C.C. ; Hseih, B.C. ; Tu, Y.L. ; Tseng, C.H. ; Hsu, T.H. ; Hsiao, R.S. ; Takahashi, S. ; Lin, R.J. ; Tsai, C.S. ; Chao, Y.P. ; Chou, K.Y. ; Chou, P.S. ; Tu, H.Y. ; Hsueh, F.L. ; Tran, L.
Author_Institution :
Taiwan Semicond. Manuf. Co., Hsinchu, Taiwan
fYear :
2010
fDate :
6-8 Dec. 2010
Abstract :
This paper presents process breakthroughs that enable a BSI 0.9μm pixel formation and its performance. The technology was developed using 300mm bulk silicon starting wafers with the state-of-the-art tool set for BSI sensor processing. This is the first demonstration of 0.9μm BSI pixel with acceptable optical performance. Further improvements are in the area of crosstalk suppression and color performance enhancement for continuous pixel scaling from 0.9μm.
Keywords :
CMOS image sensors; BSI sensor processing; CMOS image sensor; backside illumination; bulk silicon starting wafers; pixel formation; pixel scaling; size 9 mum;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting (IEDM), 2010 IEEE International
Conference_Location :
San Francisco, CA
ISSN :
0163-1918
Print_ISBN :
978-1-4424-7418-5
Electronic_ISBN :
0163-1918
Type :
conf
DOI :
10.1109/IEDM.2010.5703358
Filename :
5703358
Link To Document :
بازگشت