DocumentCode :
2369465
Title :
NASICs: A nanoscale fabric for nanoscale microprocessors
Author :
Wang, Teng ; Narayanan, Pritish ; Leuchtenburg, Micheal ; Moritz, Csaba Andras
Author_Institution :
Dept. of Electr. & Comput. Eng., Massachusetts Amherst Univ., Amherst, MA
fYear :
2008
fDate :
24-27 March 2008
Firstpage :
989
Lastpage :
994
Abstract :
The rapid progress of manufacturing nanoscale devices is pushing researchers to explore appropriate nanoscale computing architectures for high density beyond the physical limitations of conventional lithography. However, manufacturing and layout constraints, as well as high defect/fault rates expected in nanoscale fabrics, could make most device density lost when integrated into computing systems. Therefore, a nanoscale architecture that can deal with those constraints and tolerate defects/faults at expected rates, while still retaining the density advantage, is highly desirable. In this paper, we describe a novel nanoscale architecture based on semiconductor nanowires: NASICs (nanoscale application specific ICs). NASIC is a tile-based fabric built on 2-D nanowire grids and NW FETs. WISP-0 (wire streaming processor) is a processor design built on NASIC fabric where NASIC design principles and optimizations are applied. Built-in fault tolerance techniques are applied on NASICs designs to tolerate defects/faults on-the-fly. Evaluations show that compared with the equivalent CMOS design with 18 nm process (the most advanced technology expected in 2018), WISP-0 with combined built-in redundancy could be still 2~3X denser. Its yield would be 98% if the defect rate of transistors is 5%, and 77% for 10% defective transistors.
Keywords :
MOS logic circuits; application specific integrated circuits; circuit optimisation; fault tolerant computing; integrated circuit design; integrated circuit yield; logic design; microprocessor chips; nanoelectronics; nanowires; semiconductor quantum wires; 2-D nanowire grids; NASIC; NW FET; WISP-0 processor design; built-in fault tolerance techniques; circuit yield rate; nanoscale application specific IC architecture; nanoscale fabrication; nanoscale microprocessors; optimizations; semiconductor nanowires; wire streaming processor; Computer aided manufacturing; Computer architecture; FETs; Fabrics; Lithography; Microprocessors; Nanoscale devices; Nanowires; Physics computing; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanoelectronics Conference, 2008. INEC 2008. 2nd IEEE International
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-1572-4
Electronic_ISBN :
978-1-4244-1573-1
Type :
conf
DOI :
10.1109/INEC.2008.4585651
Filename :
4585651
Link To Document :
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