10 µm pixel-to-pixel pitch hybrid backside illuminated AlGaN-on-Si imagers for solar blind EUV radiation detection

Author

Malinowski, Pawel E. ; Duboz, J.Y. ; De Moor, Piet ; John, Joachim ; Minoglou, Kyriaki ; Srivastava, Puneet ; Creten, Ybe ; Torfs, Tom ; Putzeys, Jan ; Semond, Fabrice ; Frayssinet, Eric ; Giordanengo, Boris ; BenMoussa, Ali ; Hochedez, Jean Francois ; Me

Author_Institution

IMEC, Leuven, Belgium

fYear

2010

fDate

6-8 Dec. 2010

Abstract

We present the first measurement results from hybrid AlGaN-on-Si-based Extreme Ultraviolet (EUV) imagers with 10 μm pixel-to-pixel pitch. The 256×256 backside illuminated Focal Plane Arrays (FPAs) were hybridized to dedicated Si-based CMOS Readouts (ROICs). The AlGaN active layer with 40% Al concentration provides an intrinsic rejection of wavelengths larger than 280 nm (solar blindness), together with enhanced radiation hardness (1). Sensitivity in Deep UV (DUV), Far UV (FUV) and Extreme UV (EUV) was verified using synchrotron radiation down to a wavelength of 1 nm.

Keywords

CMOS image sensors; III-V semiconductors; aluminium compounds; astronomical instruments; elemental semiconductors; focal planes; gallium compounds; readout electronics; silicon; silicon radiation detectors; solar radiation; ultraviolet astronomy; ultraviolet detectors; wide band gap semiconductors; AlGaN; CMOS readouts; DUV; FPA; FUV; Si; backside illuminated focal plane arrays; deep UV; enhanced radiation hardness; extreme ultraviolet imagers; far UV; pixel-to-pixel pitch hybrid backside illuminated imager; size 10 mum; solar blind EUV radiation detection; synchrotron radiation; wavelength 1 nm;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2010 IEEE International

Conference_Location

San Francisco, CA

ISSN

0163-1918

Print_ISBN

978-1-4424-7418-5

Electronic_ISBN

0163-1918

Type

conf

DOI

10.1109/IEDM.2010.5703362

Filename

5703362