10 µm pixel-to-pixel pitch hybrid backside illuminated AlGaN-on-Si imagers for solar blind EUV radiation detection

We present the first measurement results from hybrid AlGaN-on-Si-based Extreme Ultraviolet (EUV) imagers with 10 μm pixel-to-pixel pitch. The 256×256 backside illuminated Focal Plane Arrays (FPAs) were hybridized to dedicated Si-based CMOS Readouts (ROICs). The AlGaN active layer with 40% Al concentration provides an intrinsic rejection of wavelengths larger than 280 nm (solar blindness), together with enhanced radiation hardness (1). Sensitivity in Deep UV (DUV), Far UV (FUV) and Extreme UV (EUV) was verified using synchrotron radiation down to a wavelength of 1 nm.