Title :
High Power Aluminum Nitride RF Vacuum Window
Author :
Kowalczyk, R.D. ; Kirshner, M.F. ; Wilsen, C.B. ; Turek, L.
Author_Institution :
L-3 Commun. Electron Devices
Abstract :
A window constructed from AlN was previously tested at high RF power using an S-band klystron. The experiment showed that the loss tangent of the AlN disc was much higher (0.003) than the value for an individual crystal (0.0005). The large loss tangent negated the advantages of its high thermal conductivity, resulting in a temperature rise across the window comparable to alumina
Keywords :
III-V semiconductors; aluminium compounds; klystrons; thermal conductivity; wide band gap semiconductors; AlN; RF vacuum window; S-band klystron; high power aluminum nitride; loss tangent; thermal conductivity; Aluminum nitride; Ceramics; Dielectric losses; Electron devices; Klystrons; Metallization; Radio frequency; Seals; Testing; Thermal conductivity;
Conference_Titel :
Vacuum Electronics Conference, 2006 held Jointly with 2006 IEEE International Vacuum Electron Sources., IEEE International
Conference_Location :
Monterey, CA
Print_ISBN :
1-4244-0108-9
DOI :
10.1109/IVELEC.2006.1666170
