High performance transparent photosensor array utilizing triple oxide semiconductor (HIZO-IZO-HIZO) thin film transistor

Author

Jeon, Sanghun ; Song, Ihun ; Ahn, Seung-Eon ; Park, Sungho ; Sangwook Kim ; Park, Jaechul ; Kim, Sungho ; Yin, Huaxiang ; Kim, Changjung ; Chung, U-in

Author_Institution

Semicond. Device Lab., Samsung Adv. Inst. of Technol., Yongin, South Korea

fYear

2010

fDate

6-8 Dec. 2010

Abstract

In this paper, we propose a novel sensor architecture utilizing different oxide semiconductor transistors as both switch and sensor elements, which is promising to be integrated with pixel array in a flat panel display. In addition, our study presents the optimum active structure for a workable three-terminal photosensor and the operation principle of an oxide sensor TFT proposed in this article provides to realize high frame rate (>;150Hz) sensor array, which enables to solve intrinsically slow response issue of oxide-based photosensor.

Keywords

flat panel displays; semiconductor device manufacture; thin film transistors; flat panel display; high performance transparent photosensor array; oxide semiconductor transistors; oxide-based photosensor; sensor elements; switch elements; thin film transistor; three-terminal photosensor; triple oxide semiconductor;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2010 IEEE International

Conference_Location

San Francisco, CA

ISSN

0163-1918

Print_ISBN

978-1-4424-7418-5

Electronic_ISBN

0163-1918

Type

conf

DOI

10.1109/IEDM.2010.5703364

Filename

5703364