• DocumentCode
    2369515
  • Title

    High Thermal Conductivity Aluminum Nitride for High Power Microwave Windows - An Update

  • Author

    Savrun, Ender ; Nguyen, Vu

  • Author_Institution
    Sienna Technol., Inc.
  • fYear
    0
  • fDate
    0-0 0
  • Firstpage
    35
  • Lastpage
    35
  • Abstract
    We have undertaken an extensive study to determine and to control the factors to reduce the loss tangent of AlN to match those of Al2 O3 and BeO (tan5 equiv 0.0005) without adversely affecting its thermal conductivity, dielectric strength, and mechanical strength
  • Keywords
    III-V semiconductors; aluminium compounds; beryllium compounds; electric strength; mechanical strength; microwave tubes; thermal conductivity; wide band gap semiconductors; Al2O3; AlN; BeO; RF window; aluminum nitride; ceramic materials; dielectric strength; high power microwave windows; mechanical strength; thermal conductivity; Aluminum nitride; Ceramics; Conducting materials; Dielectric losses; Dielectric materials; Grain boundaries; Grain size; Radio frequency; Thermal conductivity; Thermal factors; Aluminum nitride; RF window; ceramic; microwave window; thermal conductivity;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Vacuum Electronics Conference, 2006 held Jointly with 2006 IEEE International Vacuum Electron Sources., IEEE International
  • Conference_Location
    Monterey, CA
  • Print_ISBN
    1-4244-0108-9
  • Type

    conf

  • DOI
    10.1109/IVELEC.2006.1666171
  • Filename
    1666171
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2369515