Analysis of the Complex Dielectric Permittivity Behavior of Composites based on Al2O3/AIN and Precursor-Derived-SiC in the 1 MHz 18GHz Frequency Range

Author

Battat, J. ; Calame, J.P.

Author_Institution

Naval Res. Lab., Washington, DC

fYear

0

fDate

0-0 0

Firstpage

39

Lastpage

40

Abstract

The current research involves the synthesis of microwave-absorbing ceramic-based composites which exhibit a controllable variation in complex dielectric permittivity with respect to frequency. This study focuses on the synthesis and dielectric analysis of both porous and fully dense Al₂O₃-precursor-derived-SiC, as well as AlN-precursor-derived-SiC composites, obtained by applying various types of high temperature treatments to as-pyrolyzed porous composites

Keywords

III-V semiconductors; aluminium compounds; ceramics; composite materials; microwave materials; permittivity; silicon compounds; wide band gap semiconductors; 1 to 18000 MHz; Al₂O₃-AlN; Al₂O₃-SiC; ceramic based composites; dielectric permittivity; high temperature treatments; microwave absorbing composites; porous composites; Argon; Conductivity; Dielectric materials; Dielectric measurements; Frequency measurement; Frequency response; Frequency synthesizers; Permittivity measurement; Polymers; Silicon carbide;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Electronics Conference, 2006 held Jointly with 2006 IEEE International Vacuum Electron Sources., IEEE International

Conference_Location

Monterey, CA

Print_ISBN

1-4244-0108-9

Type

conf

DOI

10.1109/IVELEC.2006.1666173

Filename

1666173