Resistive switching devices based on Cu2S electrolyte

The Cu₂S electrolyte films have been deposited on Pt/TiO₂/Si_O2/Si(111) and conductive Si(111) substrates by using pulsed laser deposition(PLD) technique with a specially designed temperature program, which matches the dasialift-offpsila technology of semiconductor industry. The structures of the Cu₂S films were characterized by using X-ray diffractions, and their surface morphology was studied by using atom force microscopy(AFM) and scanning electron microscopy(SEM). With the fused ion beam(FIB) technique, the Cu₂S circular memory units of 300 nm diameter with sandwich structures CU/Cu₂S/Pt and Cu/Cu₂S/Si(111) were fabricated, and their electric switching properties were investigated. The resistance ratio between the dasiaOFFpsila state and the dasiaONpsila state reaches 1times10⁷ for the memory unit Cu/Cu₂S/Pt, and 3.3times10³ for the memory unit Cu/Cu₂S/Si(111), which matches the requirements of the non-volatile memory devices of next generation.