Analysis of pocket profile deactivation and its impact on Vth variation for Laser annealed device using an atomistic kinetic Monte Carlo approach

An analysis of pocket profile deactivation and its impact on Vth variation for Laser annealed devices using an atomistic kinetic Monte Carlo (KMC) approach are shown. The Carbon co-implant impacts on pFET extension/pocket are also modeled using an atomistic KMC. KMC clarified that although B-pocket in nFET shows significant deactivation, As-pocket in pFET does not show deactivation with thermal budget scaling. pFET device shows smaller thermal budget scaling dependence of Vt mismatch than that of nFET. The difference of pocket deactivation is one of important reason for higher Vth mismatch for nFET than for pFET.