DocumentCode :
2369676
Title :
Prospect of tunneling green transistor for 0.1V CMOS
Author :
Hu, Chenming ; Patel, Pratik ; Bowonder, Anupama ; Jeon, Kanghoon ; Kim, Sung Hwan ; Loh, Wei Yip ; Kang, Chang Yong ; Oh, Jungwoo ; Majhi, Prashant ; Javey, Ali ; Liu, Tsu-Jae King ; Jammy, Raj
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of California, Berkeley, CA, USA
fYear :
2010
fDate :
6-8 Dec. 2010
Abstract :
Well designed tunneling green transistor may enable future VLSIs operating at 0.1V. Sub-60mV/decade characteristics have been convincingly demonstrated on 8" wafers. Large ION at low VDD are possible according to TCAD simulations but awaits verification. VDD scaling will greatly benefit from low (effective) band gap energy, which may be provided by type II heterojunctions of Si/Ge or compound semiconductors.
Keywords :
CMOS integrated circuits; VLSI; energy gap; field effect transistors; semiconductor heterojunctions; technology CAD (electronics); tunnel transistors; tunnelling; CMOS; ION; TCAD simulations; VDD scaling; VLSI; band gap energy; compound semiconductors; tunneling green transistor; type II heterojunctions;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting (IEDM), 2010 IEEE International
Conference_Location :
San Francisco, CA
ISSN :
0163-1918
Print_ISBN :
978-1-4424-7418-5
Electronic_ISBN :
0163-1918
Type :
conf
DOI :
10.1109/IEDM.2010.5703372
Filename :
5703372
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2369676
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