• DocumentCode
    2369676
  • Title

    Prospect of tunneling green transistor for 0.1V CMOS

  • Author

    Hu, Chenming ; Patel, Pratik ; Bowonder, Anupama ; Jeon, Kanghoon ; Kim, Sung Hwan ; Loh, Wei Yip ; Kang, Chang Yong ; Oh, Jungwoo ; Majhi, Prashant ; Javey, Ali ; Liu, Tsu-Jae King ; Jammy, Raj

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Univ. of California, Berkeley, CA, USA
  • fYear
    2010
  • fDate
    6-8 Dec. 2010
  • Abstract
    Well designed tunneling green transistor may enable future VLSIs operating at 0.1V. Sub-60mV/decade characteristics have been convincingly demonstrated on 8" wafers. Large ION at low VDD are possible according to TCAD simulations but awaits verification. VDD scaling will greatly benefit from low (effective) band gap energy, which may be provided by type II heterojunctions of Si/Ge or compound semiconductors.
  • Keywords
    CMOS integrated circuits; VLSI; energy gap; field effect transistors; semiconductor heterojunctions; technology CAD (electronics); tunnel transistors; tunnelling; CMOS; ION; TCAD simulations; VDD scaling; VLSI; band gap energy; compound semiconductors; tunneling green transistor; type II heterojunctions;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2010 IEEE International
  • Conference_Location
    San Francisco, CA
  • ISSN
    0163-1918
  • Print_ISBN
    978-1-4424-7418-5
  • Electronic_ISBN
    0163-1918
  • Type

    conf

  • DOI
    10.1109/IEDM.2010.5703372
  • Filename
    5703372
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2369676