Title :
Low level and high linearity amplifiers in integrated technologies for satellite receivers: Technical issues of linearization techniques
Author :
Tapfuh-Mouafo, J. ; Jarry, Bernard ; Campovechio, Michel ; Villemazet, J.F. ; Cazaux, J.L.
Author_Institution :
AXIS: Thales & Xlim Initiative for Space Microwave Electron., Limoges
Abstract :
Based on carrier to third intermodulation ratio (C/I3), reverse engineering of a two stages low level amplifier has been made in order to access the current transistor nonlinear models. Comparisons between two models of HEMT have been performed in order to choose the one which represent accurately weak nonlinearities at low level power dynamic range. By judicious choice of bias point, 12 dB improvement of linearity has been achieved. Other issues of linearization techniques have been studied so that to be suitable for MMIC implementation.
Keywords :
MMIC power amplifiers; artificial satellites; high electron mobility transistors; linearisation techniques; low-power electronics; satellite communication; space vehicle electronics; HEMT comparison; MMIC implementation; high linearity amplifiers; integrated technologies; intermodulation ratio; linearization techniques; low level power amplifier; satellite communications systems; satellite receivers; transistor nonlinear models; Capacitance; Intrusion detection; Linearity; Linearization techniques; Microwave amplifiers; Microwave theory and techniques; Predictive models; Satellites; Space technology; Spline;
Conference_Titel :
Research in Microelectronics and Electronics Conference, 2007. PRIME 2007. Ph.D.
Conference_Location :
Bordeaux
Print_ISBN :
978-1-4244-1000-2
Electronic_ISBN :
978-1-4244-1001-9
DOI :
10.1109/RME.2007.4401834
