Low level and high linearity amplifiers in integrated technologies for satellite receivers: Technical issues of linearization techniques

Author

Tapfuh-Mouafo, J. ; Jarry, Bernard ; Campovechio, Michel ; Villemazet, J.F. ; Cazaux, J.L.

Author_Institution

AXIS: Thales & Xlim Initiative for Space Microwave Electron., Limoges

fYear

2007

fDate

2-5 July 2007

Firstpage

153

Lastpage

156

Abstract

Based on carrier to third intermodulation ratio (C/I3), reverse engineering of a two stages low level amplifier has been made in order to access the current transistor nonlinear models. Comparisons between two models of HEMT have been performed in order to choose the one which represent accurately weak nonlinearities at low level power dynamic range. By judicious choice of bias point, 12 dB improvement of linearity has been achieved. Other issues of linearization techniques have been studied so that to be suitable for MMIC implementation.

Keywords

MMIC power amplifiers; artificial satellites; high electron mobility transistors; linearisation techniques; low-power electronics; satellite communication; space vehicle electronics; HEMT comparison; MMIC implementation; high linearity amplifiers; integrated technologies; intermodulation ratio; linearization techniques; low level power amplifier; satellite communications systems; satellite receivers; transistor nonlinear models; Capacitance; Intrusion detection; Linearity; Linearization techniques; Microwave amplifiers; Microwave theory and techniques; Predictive models; Satellites; Space technology; Spline;

fLanguage

English

Publisher

ieee

Conference_Titel

Research in Microelectronics and Electronics Conference, 2007. PRIME 2007. Ph.D.

Conference_Location

Bordeaux

Print_ISBN

978-1-4244-1000-2

Electronic_ISBN

978-1-4244-1001-9

Type

conf

DOI

10.1109/RME.2007.4401834

Filename

4401834