Title :
A predictive contact reliability model for MEM logic switches
Author :
Kam, Hei ; Alon, Elad ; Liu, Tsu-Jae King
Author_Institution :
EECS Dept., Univ. of California, Berkeley, CA, USA
Abstract :
Micro-electro-mechanical (MEM) switches are of interest for ultra-low-power electronics applications [1-5] because they offer the ideal characteristics of zero off-state leakage and abrupt switching behavior. The endurance of these devices can be limited by Joule heating at the contacting asperities (Figs. 1 and 2) which eventually leads to welding-induced failure. To provide guidance for reliable MEM switch design, a predictive contact reliability model is developed and validated in this work. The results show that device endurance depends not only on the contact material, but also on the operating voltage, series resistance, load capacitance, and logic style. Using the reliability model, endurance exceeding 1015 on/off cycles is projected for a scaled MEM switch technology operating at 1V.
Keywords :
digital integrated circuits; electrical contacts; integrated circuit reliability; logic circuits; low-power electronics; microswitches; semiconductor device models; Joule heating; MEM logic switches; abrupt switching; contact material; microelectromechanical switches; predictive contact reliability; ultra-low-power electronics; voltage 1 V; zero off-state leakage;
Conference_Titel :
Electron Devices Meeting (IEDM), 2010 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4424-7418-5
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2010.5703375