Title :
Observation of photogalvanic current for interband absorption in InN films at room temperature
Author :
Tang, C.G. ; Chen, Y.H. ; Liu, Y. ; Zhang, R.Q. ; Liu, X.L. ; Wang, Z.G. ; Zhang, R. ; Zhang, Z.
Author_Institution :
Key Lab. of Semicond. Mater. Sci., Chinese Acad. of Sci., Beijing
Abstract :
The linear and circular photogalvanic effects have been observed in undoped InN films for the interband transition by irradiation of 1060 nm laser at room temperature. The spin polarized photocurrent depends on the degree of polarization, and changes its sign when the radiation helicity changes from left-handed to right-handed. This result indicates the sizeable spin-orbit interaction in the InN epitaxial layer and provides an effective method to generate spin polarized photocurrent and to detect spin-splitting effect in semiconductors with promising applications on spintronics.
Keywords :
III-V semiconductors; indium compounds; laser beam effects; photoconductivity; photovoltaic effects; semiconductor epitaxial layers; spin polarised transport; spin-orbit interactions; InN; circular photogalvanic effects; interband absorption; laser irradiation; linear photogalvanic effects; photogalvanic current; semiconductor epitaxial layer; spin polarized photocurrent; spin-orbit interaction; spin-splitting effect; spintronics; temperature 293 K to 298 K; wavelength 1060 nm; Absorption; Nanoelectronics; Temperature;
Conference_Titel :
Nanoelectronics Conference, 2008. INEC 2008. 2nd IEEE International
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-1572-4
Electronic_ISBN :
978-1-4244-1573-1
DOI :
10.1109/INEC.2008.4585667
