Title :
May the fourth (terminal) be with you - circuit design beyond FinFET
Author :
Koike, Hanpei ; O´Uchi, Shin-Ichi ; Hioki, Masakazu ; Endo, Kazuhiko ; Matsukawa, Takashi ; Liu, Yongxun ; Masahara, Meishoku ; Tsutsumi, Toshiyuki ; Sakamoto, Kunihiro ; Nakagawa, Tadashi ; Sekigawa, Toshihiro
Author_Institution :
Nanoelectron. Res. Inst., AIST, Tsukuba, Japan
Abstract :
As the scaling of conventional MOSFETs approaches its technological limit, the double-gate (DG) MOSFETs have emerged as an important candidate for the next generation device. As a novel device with an additional fourth terminal, the DG devices have a potential to evolve not only in the More-Moore way, i.e. short channel effects and variation prevention, but also in the More-than-Moore direction, i.e. extra performance enhancement and novel functionality.
Keywords :
MOS logic circuits; MOSFET; integrated circuit design; 4T DG MOSFET; circuit design; four terminal double-gate MOSFET; next generation device; performance enhancement; short channel effect;
Conference_Titel :
Electron Devices Meeting (IEDM), 2010 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4424-7418-5
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2010.5703381
