DocumentCode
2369825
Title
May the fourth (terminal) be with you - circuit design beyond FinFET
Author
Koike, Hanpei ; O´Uchi, Shin-Ichi ; Hioki, Masakazu ; Endo, Kazuhiko ; Matsukawa, Takashi ; Liu, Yongxun ; Masahara, Meishoku ; Tsutsumi, Toshiyuki ; Sakamoto, Kunihiro ; Nakagawa, Tadashi ; Sekigawa, Toshihiro
Author_Institution
Nanoelectron. Res. Inst., AIST, Tsukuba, Japan
fYear
2010
fDate
6-8 Dec. 2010
Abstract
As the scaling of conventional MOSFETs approaches its technological limit, the double-gate (DG) MOSFETs have emerged as an important candidate for the next generation device. As a novel device with an additional fourth terminal, the DG devices have a potential to evolve not only in the More-Moore way, i.e. short channel effects and variation prevention, but also in the More-than-Moore direction, i.e. extra performance enhancement and novel functionality.
Keywords
MOS logic circuits; MOSFET; integrated circuit design; 4T DG MOSFET; circuit design; four terminal double-gate MOSFET; next generation device; performance enhancement; short channel effect;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting (IEDM), 2010 IEEE International
Conference_Location
San Francisco, CA
ISSN
0163-1918
Print_ISBN
978-1-4424-7418-5
Electronic_ISBN
0163-1918
Type
conf
DOI
10.1109/IEDM.2010.5703381
Filename
5703381
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