Title :
Higher κ metal-gate/high-κ/Ge n-MOSFETs with <1 nm EOT using laser annealing
Author :
Chen, W.B. ; Shie, B.S. ; Chin, Albert ; Hsu, K.C. ; Chi, C.C.
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao-Tung Univ., Hsinchu, Taiwan
Abstract :
High performance metal-gate/high-κ/Ge n-MOSFETs are reached with low 73 Ω/sq sheet resistance (Rs), 1.10 ideality factor, 0.95 nm EOT, small 106 mV/dec sub-threshold slope (SS), good 285 cm2/Vs high-field (1 MV/cm) mobility and low 37 mV ΔVt PBTI (85°C, 1 hr). This is achieved by using 30-ns laser annealing that leads to 57% higher gate capacitance, better n+/p junction and 10X better ION/IOFF.
Keywords :
MOSFET; high-k dielectric thin films; laser beam annealing; p-n junctions; EOT; gate capacitance; high-κ/Ge n-MOSFET; higher κ metal-gate; laser annealing; n+/p junction; size 0.95 nm;
Conference_Titel :
Electron Devices Meeting (IEDM), 2010 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4424-7418-5
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2010.5703385
