DocumentCode
2369954
Title
Determination of contact and intrinsic nanowire resistivity in two-contact ZnO nanowire devices
Author
Lin, Y.F. ; Jian, W.B. ; Wu, Z.Y. ; Chen, F.R. ; Kai, J.J. ; Lin, J.J.
Author_Institution
Dept. of Electrophys., Nat. Chino Tung Univ., Hsinchu
fYear
2008
fDate
24-27 March 2008
Firstpage
1112
Lastpage
1115
Abstract
Cylindrical ZnO nanowires were synthesized to fabricate two-contact ZnO nanowire devices with the same separation distance between the two contact electrodes. Electrical properties including temperature dependence of resistance and I-V curves were recorded. According to distinct electrical behaviors and room-temperature resistance, ZnO nanowire devices can be categorized into three different types exhibiting either contact or intrinsic NW attributes.
Keywords
II-VI semiconductors; contact resistance; nanowires; wide band gap semiconductors; zinc compounds; ZnO; contact electrodes; contact resistivity; cylindrical nanowires; electrical properties; intrinsic nanowire resistivity; separation distance; Conductivity; Nanoelectronics; Nanoscale devices; Zinc oxide;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanoelectronics Conference, 2008. INEC 2008. 2nd IEEE International
Conference_Location
Shanghai
Print_ISBN
978-1-4244-1572-4
Electronic_ISBN
978-1-4244-1573-1
Type
conf
DOI
10.1109/INEC.2008.4585677
Filename
4585677
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