High mobility high on/off ratio C-V dispersion-free Ge n-MOSFETs and their strain response

Author

Fu, Yen-Chun ; Hsu, William ; Chen, Yen-Ting ; Lan, Huang-Siang ; Lee, Cheng-Han ; Chang, Hung-Chih ; Hou-Yun Lee ; Luo, Guang-Li ; Chien, Chao-Hsin ; Liu, C.W. ; Hu, Chenming ; Yang, Fu-Liang

Author_Institution

Nat. Nano Device Labs., Hsinchu, Taiwan

fYear

2010

fDate

6-8 Dec. 2010

Abstract

The record high peak mobility of ~1050 cm²/V-s on (001) Ge substrate is demonstrated in NFET. High-quality Ge/GeO₂ interface is ensured by rapid thermal oxidation (RTO) and remote ozone plasma treatment. The best achieved subthreshold swing is 150mV/dec and the on/off ratio is 2×10⁴. The low defective n⁺/p junction produced a record high on/off ratio of 2×10⁵, an ideality factor of 1.05 and strong electroluminescence. For the first time, it is reported that the uniaxial <;110>; tensile strain (0.08%) on <;110>; channel direction gives the best mobility enhancement (12%) among the different strain configurations, consistent with theoretical calculation.

Keywords

MOSFET; electroluminescence; elemental semiconductors; germanium; germanium compounds; internal stresses; oxidation; plasma materials processing; rapid thermal processing; Ge; Ge-GeO₂; NFET; RTO; electroluminescence; mobility enhancement; n-MOSFET; rapid thermal oxidation; remote ozone plasma treatment;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2010 IEEE International

Conference_Location

San Francisco, CA

ISSN

0163-1918

Print_ISBN

978-1-4424-7418-5

Electronic_ISBN

0163-1918

Type

conf

DOI

10.1109/IEDM.2010.5703388

Filename

5703388