DocumentCode :
2370033
Title :
A 512Mb NROM flash data storage memory with 8MB/s data rate
Author :
Maayan, E. ; Ran Dvir ; Shor, J. ; Yan Polansky ; Sofer, Y. ; Bloom, I. ; Avni, D. ; Eitan, B. ; Cohen, Z. ; Meyassed, M. ; Alpern, Y. ; Palm, H. ; Stain v.Kamienski, E. ; Haibach, P. ; Caspary, D. ; Riedel, S. ; Knofler, R.
Author_Institution :
Saifun Semiconductors Ltd.
Volume :
2
fYear :
2002
fDate :
7-7 Feb. 2002
Firstpage :
76
Lastpage :
408
Keywords :
CMOS process; CMOS technology; Decoding; Delay; EPROM; Electrical capacitance tomography; Hot carriers; Isolation technology; Memory; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference, 2002. Digest of Technical Papers. ISSCC. 2002 IEEE International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7335-9
Type :
conf
DOI :
10.1109/ISSCC.2002.992117
Filename :
992117
Link To Document :
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