In-situ TEM electrical and mechanical properties measurements of one-dimensional inorganic nanomaterials

Author

Golberg, D. ; Costa, P.M.F.J. ; Mitome, M. ; Bando, Y.

Author_Institution

Nanoscale Mater. Center, Nat. Inst. for Mater. Sci. (NIMS), Tsukuba

fYear

2008

fDate

24-27 March 2008

Firstpage

1127

Lastpage

1131

Abstract

The unique possibilities of Current-Voltage (I-V) and Force-Displacement (F-D) curve recordings from individual 1D-nanostructures inside high-resolution transmission electron microscopes are demonstrated. The examples include Ga-filled MgO, In-filled SiO₂ and pure multi-walled BN nanotubes.

Keywords

III-V semiconductors; atomic force microscopy; boron compounds; deformation; gallium; indium; magnesium compounds; scanning tunnelling microscopy; semiconductor nanotubes; silicon compounds; transmission electron microscopy; BN; Ga-MgO; In-SiO₂; atomic force microscopes; current-voltage curve; deformation; force-displacement curve; gallium filled magnesium oxide nanotubes; high-resolution transmission electron microscopes; indium filled silicon oxide nanotubes; one-dimensional inorganic nanomaterials; pure multiwalled boron nitride nanotubes; scanning tunneling microscope; Electric variables measurement; Mechanical factors; Mechanical variables measurement; Nanoelectronics; Nanomaterials;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanoelectronics Conference, 2008. INEC 2008. 2nd IEEE International

Conference_Location

Shanghai

Print_ISBN

978-1-4244-1572-4

Electronic_ISBN

978-1-4244-1573-1

Type

conf

DOI

10.1109/INEC.2008.4585680

Filename

4585680