Title :
In-situ TEM electrical and mechanical properties measurements of one-dimensional inorganic nanomaterials
Author :
Golberg, D. ; Costa, P.M.F.J. ; Mitome, M. ; Bando, Y.
Author_Institution :
Nanoscale Mater. Center, Nat. Inst. for Mater. Sci. (NIMS), Tsukuba
Abstract :
The unique possibilities of Current-Voltage (I-V) and Force-Displacement (F-D) curve recordings from individual 1D-nanostructures inside high-resolution transmission electron microscopes are demonstrated. The examples include Ga-filled MgO, In-filled SiO2 and pure multi-walled BN nanotubes.
Keywords :
III-V semiconductors; atomic force microscopy; boron compounds; deformation; gallium; indium; magnesium compounds; scanning tunnelling microscopy; semiconductor nanotubes; silicon compounds; transmission electron microscopy; BN; Ga-MgO; In-SiO2; atomic force microscopes; current-voltage curve; deformation; force-displacement curve; gallium filled magnesium oxide nanotubes; high-resolution transmission electron microscopes; indium filled silicon oxide nanotubes; one-dimensional inorganic nanomaterials; pure multiwalled boron nitride nanotubes; scanning tunneling microscope; Electric variables measurement; Mechanical factors; Mechanical variables measurement; Nanoelectronics; Nanomaterials;
Conference_Titel :
Nanoelectronics Conference, 2008. INEC 2008. 2nd IEEE International
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-1572-4
Electronic_ISBN :
978-1-4244-1573-1
DOI :
10.1109/INEC.2008.4585680
