DocumentCode
2370058
Title
Low power operating bipolar TMO ReRAM for sub 10 nm era
Author
Kim, M.J. ; Baek, G. ; Ha, Y.H. ; Baik, S.J. ; Kim, J.H. ; Seong, D.J. ; Kim, S.J. ; Kwon, Y.H. ; Lim, C.R. ; Park, H.K. ; Gilmer, D. ; Kirsch, P. ; Jammy, R. ; Shin, Y.G. ; Choi, S. ; Chung, C.
Author_Institution
Semicond. R&D Center, Samsung Electron. Co., Ltd., Hwasung, South Korea
fYear
2010
fDate
6-8 Dec. 2010
Abstract
The bottle neck of ReRAM (Resistive RAM) for post-NAND storage application is high operational current. Herein, we report a method to acquire low operational currents from a hetero structure ReRAM (AlOx/TiOx). The mechanism study of the hetero structure ReRAM reveals that the AlOx layer as a tunnel barrier is critical for switching, and thus switching parameters are governed by the properties of the AlOx layer. By tuning tunnel oxide properties along with adopting 5 nm sized “Dash BE”, operational currents of ≤10 μA have been achieved from this hetero structure device.
Keywords
low-power electronics; random-access storage; Resistive RAM; low power operating bipolar TMO ReRAM; post-NAND storage; size 10 nm; switching parameters; tunnel oxide properties;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting (IEDM), 2010 IEEE International
Conference_Location
San Francisco, CA
ISSN
0163-1918
Print_ISBN
978-1-4424-7418-5
Electronic_ISBN
0163-1918
Type
conf
DOI
10.1109/IEDM.2010.5703391
Filename
5703391
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